mini profet ? bsp 450 semiconductor group page 1 of 7 20.06.96 miniprofet high-side switch short-circuit protection input protection overtemperature protection with hysteresis overload protection overvoltage protection switching inductive load clamp of negative output voltage with inductive loads undervoltage shutdown maximum current internally limited e lectro s tatic d ischarge ( esd ) protection reverse battery protection 1) package: sot 223 type ordering code bsp 450 q67000-s266 maximum ratings parameter symbol values unit supply voltage range v bb -0.3...48 v load current self-limited i l i l ( sc ) a maximum input voltage 2) v in -5.0... v bb v maximum input current i in 5ma inductive load switch-off energy dissipation single pulse i l = 0.5a , t a = 85c e as 0.5 j operating temperature range storage temperature range t j t stg -40 ...+125 -55 ...+150 c max. power dissipation (dc) 3 ) t a = 25 c p tot 1.4 w electrostatic discharge capability (esd) 4) v esd 1kv thermal resistance chip - soldering point: chip - ambient 3) r thjs r thja 7 70 k/w in 3 r in + v bb signal gnd esd mini-profet out gnd logic voltage sensor voltage source charge pump level shifter temperature sensor rectifier limit for unclamped ind. loads gate protection current limit 2 4 1 load gnd load v logic overvoltage protection esd- diode 1) with resistor r gnd =150 w in gnd connection, resistor in series with in connections reverse load current limited by connected load. 2) at v in > v bb , the input current is not allowed to exceed 5 ma. 3) bsp 450 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm 2 copper area for v bb connection 4) hbm according to mil-std 883d, methode 3015.7 1 2 3 4 pins 1234 out gnd in v bb
bsp 450 semiconductor group page 2 20.06.96 electrical characteristics parameter and conditions symbol values unit at t j = 25 c, v bb = 24v unless otherwise specified min typ max load switching capabilities and characteristics on-state resistance (pin 4 to 1) i l = 0.5 a, v in = high t j = 25c t j = 125c r on -- -- 0.16 -- 0.2 0.38 w nominal load current (pin 4 to 1) 5) iso standard: v on = v bb - v out = 0.5 v t s = 85 c i l(iso) 0.7 -- -- a turn-on time to 90% v out turn-off time to 10% v out r l = 47 w t on t off -- -- 60 90 100 150 m s slew rate on 10 to 30% v out , r l = 47 w d v /dt on -- 2 4 v/ m s slew rate off 70 to 40% v out , r l = 47 w -d v /dt off -- 2 4 v/ m s input allowable input voltage range, (pin 3 to 2) v in -3.0 -- v bb v input turn-on threshold voltage v bb = 18...30v t j = -25...+125c v in(t+) -- -- 3.0 v input turn-off threshold voltage v bb = 18...30v t j = -25...+125c v in(t-) 1.82 -- -- v input threshold hysteresis d v in(t) -- 0.1 -- v off state input current (pin 3) v in(off) = 1.82 v t j = -25...+125c i in(off) 20 -- -- m a on state input current (pin 3) v in(on) = 3.0 v to v bb t j = -25...+125c i in(on) -- -- 110 m a input resistance t j = -25...+125c r in 1.5 2.8 3.5 k w 5) i l(iso) is limited by the current limitation, see i l(sc)
bsp 450 parameter and conditions symbol values unit at t j = 25 c, v bb = 24v unless otherwise specified min typ max semiconductor group page 3 20.06.96 operating parameters operating voltage t j =-25...+125c v bb(on) 12 -- 40 v undervoltage shutdown t j =-25...+125c v bb(under) 7 -- 10.5 v undervoltage restart t j =-25...+125c: v bb(u rst) -- -- 11 v undervoltage hysteresis d v bb(under) -- 0.4 -- v standby current (pin 4), v in = low t j =-25...+100c t j =125c 6) i bb(off) -- 10 25 50 m a operating current (pin 2), v in = high t j =-25...+125c i gnd -- 1 1.6 ma leakage current (pin 1) v in = low t j =-25...+125c i l(off) -- -- 2 m a protection functions current limit (pin 4 to 1) t j = 25c t j = -25...+125c i l(sc) 0.7 0.7 1.5 -- 2 2.4 a overvoltage protection i bb =4ma t j =-25...+125c v bb(az) 48 -- -- v output clamp (ind. load switch off) at v out = v bb - v on(cl), i bb = 4ma v on(cl) -- 72 -- v thermal overload trip temperature t jt 135 150 -- c thermal hysteresis d t jt -- 10 -- k inductive load switch-off energy dissipation 7) t j start = 85 c, single pulse, i l = 0.5 a, v bb = 12 v e as -- -- 0.5 j reverse battery reverse battery voltage 8 ) -v bb 30 v continious reverse drain current t a = 25c -i s -- -- 1 a drain-source diode voltage i f = 1 a, v in = low v out > v bb -v on -- -- 1.2 v 6) increase of standby current at t j = 125c caused by temperature sense current 7) while demagnetizing load inductance, dissipated energy is e as = (v on(cl) * i l (t) dt, approx. e as = 1 / 2 * l * i 2 l * ( v on(cl) v on(cl) -v bb ) 8) requires 150 w resistor in gnd connection. reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
bsp 450 semiconductor group page 4 20.06.96 max allowable power dissipation p tot = f (t a ,t sp ) p tot [w] 0 2 4 6 8 10 12 14 16 0 25 50 75 100 125 t t sp a t a , t sp [c] on state resistance (vbb-pin to out pin) r on = f (t j ); v bb = 24 v;i l = 0.5 a r on [ w ] 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 -50 -25 0 25 50 75 100 125 98% t j [c] current limit characteristic i l(sc) = f (v on ) (v on see testcircuit) i l(sc) [a] 0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 15 20 25 25 c 125c -25c v on [v] typ. input current i in = f(v in ); v bb = 24 v i in [ m a] 0 10 20 30 40 50 60 70 80 90 0 5 10 15 20 25 125c 25c -25c v in [v]
bsp 450 semiconductor group page 5 20.06.96 typ. overload current i l(lim) = f (t), v bb =24v, no heatsink, param.:t jstart i l(lim) [a] 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -20 0 20 40 60 80 100 125c -25c t [ms] short circuit current i l(sc) = f (t j ); v bb = 30 v; i l(sc) [ a ] 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -25 0 25 50 75 100 125 t j [c] typ. operating current i gnd = f (t j ), v bb =30v, v in =high gnd [ma] 0 0. 2 0. 4 0. 6 0. 8 1 -25 0 25 50 75 100 125 t j [c] typ. standby current i bb(off) = f(t j ); v bb = 30 v, v in = low i bb(off) [ m a] 0 1 2 3 4 5 6 7 -25 0 25 50 75 100 125 150 t j [c]
bsp 450 semiconductor group page 6 20.06.96 typ. input turn on voltage threshold v in(t+) = f (t j ) v in(t+) [v] 0 0.5 1 1.5 2 2.5 3 -25 0 25 50 75 100 125 30v 18v t j [c] typ. on-state resistance (vbb-pin to out-pin) r on = f (v bb, i l ); i l = 0.5a, t j = 25 c; r on [m w ] 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 35 40 45 v bb [v] t est circuit
bsp 450 semiconductor group page 7 20.06.96 package: all dimensions in mm. sot 223/4: edition 7.97 published by siemens ag, bereich halbleiter vetrieb, werbung, balanstra?e 73, 81541 mnchen ? siemens ag 1997 all rights reserved. attention please! as far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. the information describes a type of component and shall not be considered as warranted characteristics. terms of delivery and rights to change design reserved. for questions on technology, delivery and prices please contact the semiconductor group offices in germany or the siemens companies and representatives worldwide (see address list). due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest siemens office, semiconductor group. siemens ag is an approved cecc manufacturer. packing please use the recycling operators known to you. we can also help you - get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of transport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or systems must be expressly authorized for such purpose! critical components 1 of the semiconductor group of siemens ag, may only be used in life-support devices or systems 2 with the express written approval of the semiconductor group of siemens ag. 1) a critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2) life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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